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Freescale Semiconductor Technical Data
MRFG35030R5 Rev. 2, 3/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. * Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ = 650 mA, Pout = 3 Watts Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain --12 dB Drain Efficiency -- 21% ACPR @ 5 MHz Offset -- -41 dBc @ 3.84 MHz Channel Bandwidth * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Excellent Thermal Stability * In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRFG35030R5
3550 MHz, 30 W, 12 V SINGLE W-CDMA POWER FET GaAs PHEMT
CASE 1490-02, STYLE 1
Table 1. Maximum Ratings
Rating Drain-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Gate-Source Voltage RF Input Power Storage Temperature Range Channel Temperature
(1)
Symbol VDSS PD VGS Pin Tstg Tch TC Symbol RJC
Value 15 79 0.53 -5 37 - 40 to +175 175 - 20 to +90
Unit Vdc W W/C Vdc dBm C C C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case 1. For reliable operation, the operating channel temperature should not exceed 150C. Value 1.9 Unit C/W
(c) Freescale Semiconductor, Inc., 2005. All rights reserved.
MRFG35030R5 1
RF Device Data Freescale Semiconductor
Table 3. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic DC Characteristics Off State Drain Current (VDS = 3.5 Vdc, VGS = -2 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = -2.5 Vdc) Gate-Source Cut-off Voltage (VDS = 3.5 Vdc, IDS = 1 mA/mm) IDSO IDSX VGS(th) -- -- -0.7 15 5 -0.85 425 42.5 -1.1 Adc mAdc Vdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg., f = 3550 MHz, Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Output Power, 1 dB Compression Point, CW 1. Measurements made with device in test fixture. Gps D ACPR P1dB 10 17 -- -- 12 21 -41 30 -- -- -36 -- dB % dBc W
Typical RF Performance (In Freescale Test Fixture, 50 hm system) VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz
MRFG35030R5 2 RF Device Data Freescale Semiconductor
VBIAS
VSUPPLY + C10
+
C9
C8
C7
C6
C5
C4
C3 R1
C16
C15
C14
C13
C12
C11
C2
C17
Z5 RF INPUT
Z6
Z1 C1
Z2
Z3
Z4
Z7
C19
Z8 C18
Z9
RF OUTPUT
C20
Z1 Z2 Z3 Z4 Z5, Z6
0.065 x 0.500 Microstrip 0.065 x 0.185 Microstrip 0.115 x 0.350 Microstrip 0.065 x 0.215 Microstrip 0.020 x 0.527 Microstrip
Z7 Z8 Z9 PCB
0.085 x 0.205 Microstrip 0.065 x 0.230 Microstrip 0.065 x 0.814 Microstrip Rogers RO4350, 0.030, r = 3.5
Figure 1. MRFG35030 Test Circuit Schematic
Table 4. MRFG35030 Test Circuit Component Designations and Values
Part C1, C2, C17 C3, C16 C4, C15 C5, C14 C6, C13 C7, C12 C8, C11 C9, C10 C18 C19 C20 R1 Description 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 39K Chip Capacitors 22 F, 35 V Tantalum Capacitors 1.0 pF Chip Capacitor 0.7 pF Chip Capacitor 0.3 pF Chip Capacitor 10 W, 1/4 W, 1% Resistor Part Number 100A6R8CP500X 100A100JP500X 100A101JP500X 100B101JP500X 100B102JP500X CDR33BX104AKWS 200B393KP50X T491X226K035AS 08051J1R0BBT 08051J0R7BBT 08051J0R3BBT D55342M07B10J0R Manufacturer ATC ATC ATC ATC ATC Newark ATC ATC AVX AVX AVX Dale
MRFG35030R5 RF Device Data Freescale Semiconductor 3
VGG
VDD
C8 C9 C7 C6 C5 C4 C3
C11 C12 C13 C14 C15 C16 C10
R1 C2 C17
C19 C1 CUT OUT AREA C18
C20
MRFG35030 Rev 01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRFG35030 Test Circuit Component Layout
MRFG35030R5 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
16 14 G ps , POWER GAIN (dB) 12 Gps 10 8 6 D 20 25 30 35 40 45 Pout, OUTPUT POWER (dBm) 20 10 0 VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 50 40 30
Figure 3. Single-Carrier W-CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-10 -20 -30 -40 -50 -60
-5 -10 -15
IRL
ACPR
-20 -25
20
25
30
35
40
45
Pout, OUTPUT POWER (dBm)
Figure 4. Single-Carrier W-CDMA Adjacent Channel Power Ratio and Input Return Loss versus Output Power
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) (dB)
3.6 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -96.4
IRL, INPUT RETURN LOSS (dB)
3.84 MHz Channel BW
VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
0
-ACPR @ 3.84 MHz BW
D , DRAIN EFFICIENCY (%)
+ACPR @ 3.84 MHz BW
Center 3.55 GHz
2 MHz f, FREQUENCY (MHz)
Span 20 MHz
Figure 5. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal
Figure 6. Single-Carrier W-CDMA Spectrum MRFG35030R5
RF Device Data Freescale Semiconductor
5
Zo = 50
Zsource f = 3600 MHz Zload f = 3500 MHz f = 3500 MHz f = 3600 MHz
VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg. f MHz 3500 3550 3600 Zsource 34.459 + j13.83 35.460 + j14.19 36.000 + j14.12 Zload 10.322 + j5.42 10.400 + j5.44 10.100 + j5.72
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 7. Series Equivalent Source and Load Impedance
MRFG35030R5 6 RF Device Data Freescale Semiconductor
Table 5. Class AB Common Source S-Parameters at VDD = 12 Vdc, IDQ = 650 mA
f GHz 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 S11 |S11| 0.96 0.96 0.96 0.96 0.96 0.96 0.95 0.95 0.95 0.95 0.95 0.94 0.94 0.94 0.93 0.93 0.93 0.92 0.92 0.91 0.91 0.90 0.90 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.86 0.85 0.83 0.81 0.79 0.76 0.72 0.69 0.64 0.59 0.53 146.14 143.94 141.83 139.54 137.28 134.74 132.06 129.35 126.57 123.71 120.59 117.35 113.90 110.38 106.54 102.65 98.32 93.83 89.08 84.07 78.68 73.15 67.33 61.07 54.56 47.64 40.29 32.60 24.42 16.02 7.28 -1.82 -10.92 -20.24 -29.71 -39.08 -48.39 -57.62 -66.46 -75.13 -83.52 -91.51 -99.34 -106.90 -114.08 -120.87 -127.33 |S21| 0.80 0.80 0.80 0.80 0.80 0.80 0.81 0.82 0.84 0.86 0.89 0.92 0.95 0.99 1.03 1.08 1.14 1.19 1.26 1.32 1.39 1.46 1.54 1.62 1.71 1.80 1.89 1.99 2.09 2.20 2.30 2.40 2.49 2.58 2.66 2.73 2.79 2.84 2.89 2.93 2.98 3.02 3.06 3.11 3.17 3.24 3.31 S21 26.33 22.43 18.46 14.44 10.43 6.28 2.08 -2.17 -6.49 -10.87 -15.96 -20.65 -25.47 -30.41 -35.59 -41.07 -46.87 -53.00 -59.40 -66.00 -72.86 -79.86 -87.14 -94.66 -102.36 -110.40 -118.62 -127.18 -135.99 -145.15 -154.53 -164.19 -174.07 175.96 165.78 155.55 145.30 135.00 124.74 114.46 104.21 93.91 83.64 73.20 62.60 51.75 40.49 |S12| 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 S12 -26.74 -28.86 -31.83 -34.90 -37.88 -40.90 -44.27 -47.36 -51.09 -55.57 -59.77 -64.36 -68.43 -72.98 -78.34 -83.48 -88.75 -94.75 -100.91 -106.97 -113.46 -120.27 -127.45 -135.04 -142.85 -150.91 -159.34 -168.04 -177.20 173.58 163.81 153.87 143.74 133.49 122.87 112.29 101.82 91.15 80.47 69.79 59.07 48.50 37.72 26.81 15.81 4.40 -7.27 |S22| 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.86 0.85 0.84 0.83 0.82 0.80 0.79 0.78 0.77 0.76 0.75 0.73 0.72 0.70 0.68 0.65 0.63 0.60 0.56 0.53 0.49 0.44 0.40 0.35 0.30 0.25 0.21 0.16 0.14 0.13 0.16 0.20 0.24 0.29 0.35 0.40 0.45 0.50 0.55 S22 164.54 162.97 161.29 159.77 158.47 157.36 156.46 155.56 154.65 153.72 151.32 150.22 149.03 147.80 146.32 144.63 142.65 140.48 138.36 136.24 134.10 132.02 130.09 127.98 125.90 123.85 121.74 119.56 117.39 115.36 113.49 111.97 111.53 112.88 117.12 126.44 143.32 165.50 -175.99 -164.66 -158.95 -156.30 -155.52 -156.12 -157.58 -160.01 -163.32
MRFG35030R5 RF Device Data Freescale Semiconductor 7
Table 5. Class AB Common Source S-Parameters at VDD = 12 Vdc, IDQ = 650 mA (continued)
f GHz 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.46 0.38 0.29 0.22 0.18 0.22 0.32 0.43 0.54 0.64 0.73 0.80 0.85 0.90 0.93 0.95 0.96 0.97 0.98 0.98 0.98 0.99 0.99 0.99 0.99 0.99 0.99 0.99 1.00 1.00 1.00 1.00 0.99 1.00 -132.64 -136.44 -136.21 -127.35 -102.40 -76.34 -66.79 -66.93 -71.16 -77.27 -84.04 -90.75 -97.18 -103.05 -108.56 -113.68 -118.39 -122.39 -126.23 -129.72 -132.86 -135.98 -138.73 -141.42 -144.00 -146.52 -148.89 -151.15 -153.53 -155.94 -158.19 -160.43 -162.40 -164.61 |S21| 3.37 3.44 3.48 3.51 3.50 3.45 3.36 3.22 3.03 2.80 2.55 2.29 2.03 1.79 1.56 1.35 1.17 1.01 0.87 0.75 0.65 0.57 0.49 0.43 0.37 0.33 0.29 0.26 0.24 0.21 0.19 0.18 0.16 0.15 S21 28.77 16.54 3.73 -9.59 -23.47 -37.84 -52.56 -67.50 -82.42 -97.34 -111.69 -125.67 -138.92 -151.47 -163.31 -174.50 175.04 165.37 156.24 147.79 139.97 132.62 125.76 119.49 113.69 108.35 103.42 98.73 94.28 89.98 85.78 81.45 78.17 74.76 |S12| 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.06 0.06 0.06 0.05 0.05 0.04 0.04 0.03 0.03 0.03 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 S12 -19.38 -32.21 -45.19 -58.78 -73.20 -88.01 -103.17 -118.63 -134.11 -149.56 -164.55 -179.15 166.69 153.98 141.83 130.44 119.35 108.97 99.25 90.59 83.55 76.85 69.46 62.85 56.84 51.52 46.39 42.21 37.59 34.26 30.24 27.16 25.24 22.43 |S22| 0.59 0.64 0.68 0.71 0.73 0.73 0.71 0.66 0.59 0.50 0.40 0.29 0.20 0.17 0.22 0.29 0.38 0.45 0.52 0.58 0.63 0.68 0.72 0.76 0.79 0.82 0.85 0.87 0.89 0.90 0.91 0.92 0.92 0.93 S22 -167.40 -172.25 -177.89 175.79 168.90 161.51 153.97 146.50 139.64 133.98 130.85 133.09 146.65 177.35 -158.21 -149.29 -147.85 -149.63 -152.98 -157.04 -161.14 -165.09 -168.90 -172.28 -175.36 -178.09 179.48 177.24 175.01 172.99 170.86 168.57 165.89 163.33
MRFG35030R5 8 RF Device Data Freescale Semiconductor
NOTES
MRFG35030R5 RF Device Data Freescale Semiconductor 9
NOTES
MRFG35030R5 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
G B 1 bbb M T A
R (LID)
M
B
M
B (FLANGE)
S (INSULATOR) J 3 2 K 2X D aaa M T A M (INSULATOR)
M
4X
Q aaa
M
aaa M T A TA
M
M
B
M
BM F
B
M
aaa M T A
M
B
M
N (LID) bbb M T A
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED .030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX 0.948 0.958 0.680 0.720 0.147 0.182 0.055 0.065 0.035 0.045 0.003 0.006 0.803 BSC 0.057 0.067 0.315 BSC 0.095 0.125 0.595 0.605 0.594 0.606 0.092 0.112 0.678 0.692 0.680 0.690 0.004 0.015 MILLIMETERS MIN MAX 24.08 24.33 17.27 18.29 3.73 4.62 1.40 1.65 0.89 1.14 0.08 0.15 20.40 BSC 1.45 1.70 8.00 2.41 3.18 15.11 15.37 15.09 15.39 2.34 2.84 17.22 17.58 17.27 17.23 0.10 0.38
B
M
C E
H
A
A (FLANGE)
T SEATING PLANE
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
CASE 1490-02 ISSUE A
MRFG35030R5 RF Device Data Freescale Semiconductor 11
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MRFG35030R5 12
Document Number: MRFG35030R5 Rev. 2, 3/2005
RF Device Data Freescale Semiconductor

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